Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

1997-10-09

1999-11-16

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438632, H01L 214763

Patent

active

059857471

ABSTRACT:
An underlying Al alloy wiring 3 and an inter-layer insulation film 4 are formed sequentially on a semiconductor substrate 1 via an inter-layer insulation film 2. An inter-layer insulation film 5 highly hygroscopic and containing much moisture is made and etched back to flush depressions by the underlying Al alloy wiring 3. After an inter-layer insulation film 6 is made, a contact-hole C is made in the inter-layer insulation films 6 and 4. After that, prior to making a TiN/Ti film 7, gases are removed from the inter-layer insulation films 4 through 6 by annealing. The TiN/Ti film 7 is made as thick as 80 nm. In an alternative version, after the inter-layer insulation film is etched back, annealing is done to remove gases especially from the inter-layer insulation film 5. In another alternative version, a protective film 9 is made on the side wall of the contact-hole C, or the surface of the inter-layer insulation films 6 and 4 having formed the contact-hole or the surface of the inter-layer insulation film 5, is nitrified, to prevent degassing of the inter-layer insulation films 4 through 6.

REFERENCES:
patent: 5650360 (1997-07-01), Tomita
patent: 5716869 (1998-02-01), Hibino et al.

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