Process for forming self-aligned conductive plugs in multiple in

Details Process for forming self-aligned conductive plugs in multiple in Process for forming self-aligned conductive plugs in multiple in

1996-11-21

1999-11-16

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438631, 438634, 438637, 438638, 438666, 438668, 438671, 438672, H01L 214763

Patent

active

059857463

ABSTRACT:
A process and resulting product are disclosed for an integrated circuit structure including two or more metal wiring levels interconnected by metal-filled vias. A first insulation layer, such as an oxide layer, is formed over a first metal wiring level on an integrated circuit structure. A via mask layer, such as a nitride mask layer, is then formed over the insulation layer with openings formed in the via mask layer in registry with portions of the underlying metal wiring to which it is desired to make electrical contact by the formation of vias through the first insulation layer. A second insulation layer, which may comprise a second oxide layer, is then formed over the mask layer. A reverse second metal wiring level mask, such as a photoresist mask or another nitride mask, is then formed over the second insulation layer to define the second metal wiring. The second insulation layer is then anisotropically etched with an etchant which is selective to the second level metal wiring mask and the via mask, i.e., it will etch both of the insulation layers in preference to the mask materials. The etching of the upper insulation layer forms openings, e.g., trenches, therein conforming to the desired metal pattern of the second metal wiring level, stopping at the via etch mask. However, wherever openings occur in the via etch mask, the etch continues through such openings and through the underlying first insulation layer to form vias extending down to the first level of metal wiring thereunder. The second metal wiring level mask is then removed and a metal layer is deposited over the second insulation level and into the openings, e.g., trenches, etched therein corresponding to the desired second level metal wiring. At the same time the metal deposits in the vias down to the first metal wiring (which is usually formed at a higher temperature by choosing different melting point alloys). Any metal deposited on the surface of the second insulation layer is then removed, leaving the second level metal wiring deposited in the openings (trenches) formed in the second insulation layer, and the metal deposited in the vias forming metal plugs which serve to electrically interconnect the first and second metal wiring levels.

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