Semiconductor integrated circuit and manufacturing method of the

Details Semiconductor integrated circuit and manufacturing method of the Semiconductor integrated circuit and manufacturing method of the

1997-02-26

1999-03-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, H01L 2362

Patent

active

058805010

ABSTRACT:
A dual diffusion layer composed of an n.sup.- type diffusion layer 5 and an n.sup.+ type diffusion layer 6 is formed in a first element forming region element-separated by a field oxidized film 2, a p.sup.+ type diffusion layer 7 is formed in a second element forming region, a p type guard ring layer 3 provided below the field oxidized film 2 and the cathode n.sup.+ type diffusion layer 6 are placed adjacent to each other, and thus reach-through breakdown voltage is made lower than that of an internal transistor.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit and manufacturing method of the does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit and manufacturing method of the, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit and manufacturing method of the will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1324158