Method of forming a capacitor of a semiconductor device

Details Method of forming a capacitor of a semiconductor device Method of forming a capacitor of a semiconductor device

1998-06-11

1999-11-16

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

438 3, 438240, H01L 2120

Patent

active

059857307

ABSTRACT:
The present invention relates to a method of forming a capacitor of a semiconductor device, which specially treats the surface of a charge storage electrode of the lower in order to improve the poor stepcoverage of the Ta.sub.2 O.sub.5 film deposited by the PECVD method in the capacitor using the Ta.sub.2 O.sub.5 film having a specific dielectric constant as the dielectric film, prevents the leakage current from generating according to improving the electrical characteristic of the capacitor by depositing the Ta.sub.2 O.sub.5 film by use of the LPCVD method where the stepcoverage is excellent, and improves the characteristic of the semiconductor device and the trust according to the result.

REFERENCES:
patent: 5362632 (1994-11-01), Mathews
patent: 5508221 (1996-04-01), Kamiyama
patent: 5677226 (1997-10-01), Ishitani
patent: 5786248 (1998-07-01), Schuegraf
patent: 5858851 (1999-01-01), Yamagata et al.
patent: 5859760 (1999-01-01), Park et al.
patent: 5876788 (1999-03-01), Bronner et al.
patent: 5877062 (1999-03-01), Horii

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