SiC/111-V-nitride heterostructures on SiC/SiO.sub.2 /Si for opto

Details SiC/111-V-nitride heterostructures on SiC/SiO.sub.2 /Si for opto SiC/111-V-nitride heterostructures on SiC/SiO.sub.2 /Si for opto

1997-01-31

1999-03-09

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257 77, 257200, 257 18, 257 21, 257 22, 257 97, H01L 2915, H01L 3300, H01L 31101

Patent

active

058804919

ABSTRACT:
A low-cost Si-based construction for optical and electronic bulk-heterostructure devices and multiple-quantum-well devices in which the active layers of the device are SiC or AlGaN or InGaN or InAlN. Material quality is high, and the MQW devices such as blue light lasers or LEDs have stable pseudomorphic layers with low defect densities. The low-cost large-area 3C SiC substrate is created by converting 100% of a 100-500 angstrom (.ANG.) layer of Si in a silicon-on-insulator wafer to 3C SiC with propane at 1300 degrees C. The SiO2 layer provides strain-free support for the "perfect" 3C SiC crystal layer. Direct-gap wurtzite nitride heterostructures, bulk or pseudomorphic MQW, are grown upon an (0001) 6H SiC epilayer on the (111) 3C SIC substrate, or directly upon the (111) 3C SiC substrate. For zincblende heterostructures, a (100) 3C SiC substrate is used.

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Steckl et al J. Electroch. Soc. vol. 141 No. 6 Jun. 1994 "SiC Silicon-on Insulator in Silacyclobutane".
King et al, GaN and Related Materials First Int. Symp. . . . Nov. 27-Dec. 1, 1995 "XPS Measurement . . . Interface" pp. 375-380.

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