Semiconductor device in which defects due to LOCOS or heat treat

Details Semiconductor device in which defects due to LOCOS or heat treat Semiconductor device in which defects due to LOCOS or heat treat

1996-04-26

1999-07-20

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257329, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059259116

ABSTRACT:
A semiconductor device having a concavity formed by LOCOS technique, in which defects induced due to the LOCOS oxidation step or a following heat-treatment step are suppressed, is disclosed. An n.sup.+ type region, the impurity concentration of which is caused to be 1.times.10.sup.19 cm.sup.-3 or more, is formed in an n.sup.- type semiconductor layer. By means of this, defects occur within the n.sup.+ type region or in a proximity of the boundary of the n.sup.+ type region and the n.sup.- type semiconductor layer. The defects trap contaminant impurities taken into the wafer during the manufacturing steps, and cause contaminant impurities existing in the proximity of a concavity of the semiconductor surface to be reduced. As a result thereof, defect occurrence in the proximity of the concavity can be suppressed, and occurrence of leakage and degradation in breakdown voltage between drain and source accompanying defect occurrence in a channel region can be suppressed.

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