TFT fabrication on leached glass surface

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

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438164, 438482, 438488, 438479, H01L 2136, H01L 2184

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active

059857005

ABSTRACT:
A method for forming top gated TFTs directly on a glass surface, wherein the glass surface is first leached adequately to provide a silica-rich boundary area at the glass surface, after which the source-drain semiconductor region is deposited directly onto the glass surface without a barrier layer.

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