Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-11-26
1999-11-16
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438164, 438482, 438488, 438479, H01L 2136, H01L 2184
Patent
active
059857005
ABSTRACT:
A method for forming top gated TFTs directly on a glass surface, wherein the glass surface is first leached adequately to provide a silica-rich boundary area at the glass surface, after which the source-drain semiconductor region is deposited directly onto the glass surface without a barrier layer.
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Carlson Robert L.
Corning Incorporated
Klee Maurice M.
Wilczewski Mary
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