Floating gate type non-volatile semiconductor memory device havi

Details Floating gate type non-volatile semiconductor memory device havi Floating gate type non-volatile semiconductor memory device havi

1997-10-30

1999-07-20

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257318, 257320, 257326, 257321, H01L 2976

Patent

active

059259060

ABSTRACT:
A tunnel region is surrounded by an impurity diffusion layer and a drain diffusion layer, and a coupling portion coupling one and the other end portions of a floating gate to each other is arranged on only an isolation region. With this arrangement, even if a parasitic inversion layer is formed below the other end portion upon extraction of electrons, the parasitic inversion layer does not contact a semiconductor substrate, resulting in a small substrate current. Therefore, a high-voltage, large-current external power supply need not be prepared in addition to a normal voltage power supply.

REFERENCES:
patent: 5440158 (1995-08-01), Sung-Mu

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