Semiconductor device and method of increasing device breakdown v

Details Semiconductor device and method of increasing device breakdown v Semiconductor device and method of increasing device breakdown v

1995-03-27

1996-09-10

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, 257347, 257492, 257901, H01L 2976

Patent

active

055548725

ABSTRACT:
In a semiconductor device including a composite substrate formed by bonding first and second semiconductor substrates to each other through an oxide film and an insulator isolation trench formed from a major surface of the first semiconductor substrate to reach the oxide film and to surround an element forming region, when the potential of the second substrate is set at a potential higher than the minimum potential in the element forming region of the first substrate, an breakdown voltage can be increased. In a semiconductor integrated circuit having an element isolation region, a semiconductor device of a perfect dielectric isolation structure having an element forming region having a thickness smaller than that of the element forming region of a P-N junction isolation structure is used to reduce, e.g., a base curvature influence, thereby obtaining a further high breakdown voltage.

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Chang et al., "500-V. n-Channel Insulated-Gate Bipolar Transistor with a Trench Gate Structure", IEEE Transactions On Electron Devices, vol. 36, No. 9, Sep., 1989, pp. 1824-1829.

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