Oxide etch process using a mixture of a fluorine-substituted hyd

Details Oxide etch process using a mixture of a fluorine-substituted hyd Oxide etch process using a mixture of a fluorine-substituted hyd

1997-10-09

1999-03-09

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438724, H01L 21302

Patent

active

058800379

ABSTRACT:
A method of plasma etching oxide in the presence of nitride includes contacting the oxide with a mixture of gases including one or more flourine-substituted hydrocarbon etching gases and acetylene. The method exhibits high selectivity to nitride, including nitride on uneven surfaces.

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