Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1996-12-27
1999-03-09
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438762, 438767, 438771, H01L 21316
Patent
active
058800298
ABSTRACT:
A method of passivating semiconductor devices including the steps of providing a semiconductor device having a surface of semiconductor material to be passivated, exposing the surface of semiconductor material to deep ultra-violet (DUV) radiation in an ambiance including oxygen so as to form a layer of oxide on the surface of semiconductor material, and forming a layer of passivation material on the layer of oxide. The DUV oxide forms a different interface with the semiconductor material which significantly improves operating characteristics of the semiconductor device.
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S.W. King et al., MRS Symp. Proc. 345 (1996) 739 Ex situ and In situ methods for oxide and carbon removal . . . , Nov. 1995.
Eisenbeiser Kurt
Huang Jenn-Hwa
Bowers Charles
Koch William E.
Motorola Inc.
Parsons Eugene A.
Whipple Matthew
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