Process for fabricating semiconductor wafer

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438692, H01L 21302

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active

058800271

ABSTRACT:
The present invention provides a process for fabricating a semiconductor wafer, including surface-grinding both sides of the sliced wafer, and cleaning the surface-ground wafer with an alkaline solution to remove the sharp protruded part. The frictional resistance between the surface-ground wafer and a polishing cloth can be reduced, thus extending a life of a template and the polishing cloth.

REFERENCES:
patent: 3951728 (1976-04-01), Egashira et al.
patent: 4276114 (1981-06-01), Takano et al.
patent: 4885056 (1989-12-01), Hall et al.
patent: 5679212 (1997-10-01), Kato et al.
U.S. Serial No. 08/705,155 by Fumitaka Kai et al. filed Aug. 29, 1996.
Wolf, Stanley "Silicon Processing For The VLSI Era, Volume I: Process Technology", Lattice Press, pp. 5140520, 1986.

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