Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-03-27
1999-03-09
Niebling, John F.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, H01L 21302
Patent
active
058800271
ABSTRACT:
The present invention provides a process for fabricating a semiconductor wafer, including surface-grinding both sides of the sliced wafer, and cleaning the surface-ground wafer with an alkaline solution to remove the sharp protruded part. The frictional resistance between the surface-ground wafer and a polishing cloth can be reduced, thus extending a life of a template and the polishing cloth.
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U.S. Serial No. 08/705,155 by Fumitaka Kai et al. filed Aug. 29, 1996.
Wolf, Stanley "Silicon Processing For The VLSI Era, Volume I: Process Technology", Lattice Press, pp. 5140520, 1986.
Hajime Hirofumi
Yubitani Toshiharu
Komatsu Electronic Metals Co. Ltd.
Lebentritt Michael S.
Niebling John F.
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