Method for air gap formation by plasma treatment of aluminum int

Details Method for air gap formation by plasma treatment of aluminum int Method for air gap formation by plasma treatment of aluminum int

1997-12-16

1999-03-09

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438688, 438619, 438699, 438671, H01L 2348

Patent

active

058800263

ABSTRACT:
An ultimate low k (k=1) gap structure for high speed logic devices in which the sidewalls fully or partially cover the gaps between the interconnects by dry etching the already formed aluminum interconnects after the photoresist has been stripped. This method is particularly useful for the subsequent deposition of silicon dioxide and for forming air gaps.

REFERENCES:
patent: 5198385 (1993-03-01), Devitt et al.
patent: 5308440 (1994-05-01), Chino et al.
patent: 5708303 (1998-01-01), Jeng
patent: 5759913 (1998-06-01), Fulford, Jr. et al.

Affiliated with

Also associated with

Rating

Method for air gap formation by plasma treatment of aluminum int does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for air gap formation by plasma treatment of aluminum int, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for air gap formation by plasma treatment of aluminum int will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1320624