Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-12-11
1999-03-09
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438622, H01L 21461
Patent
active
058800247
ABSTRACT:
A semiconductor integrated circuit device has circuit components, a wiring arrangement electrically connected to the circuit components and a shield structure for preventing signal wirings from a cross-talk between the signal wirings, and the signal wirings are patterned from a conductive layer extending over grooves formed in the shield structure so as to be self-aligned with the shield structure.
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"Closely Packed Microstrip Lines as Very High-Speed Chip-to-Chip Interconnects", Oh-Kyong Kwon et al, IEEE Transactions on Components, Hybrids. and Manufacturing Technology, vol. CHMT-10, No. 3, pp. 314 to 320, Sep. 1987.
"The Parylene-Aluminum Multilayer Interconnection System for Wafer Scale Integration and Wafer Scale Hybrid Package", Journal of Electronic Materials, vol. 18, No. 2, pp. 301 to 311, 1989.
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Hayashi Yoshihiro
Nakajima Tsutomu
Everhart Caridad
NEC Corporation
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