Process and apparatus for growing single crystals of III-V compo

Details Process and apparatus for growing single crystals of III-V compo Process and apparatus for growing single crystals of III-V compo

1987-04-14

1992-09-08

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156607, 1566202, 1566205, 156DIG70, 156DIG83, C30B 2702

Patent

active

051455501

ABSTRACT:
A process for growing single crystals of the III-V compound semiconductor is provided, which is the vapor pressure control method using a vertical puller and which is characterized by dividing the surface area of the melt into two sections, covering one section with a liquid encapsulant while remaining the other section in contact with the atmosphere of the vessel (furnace), and this process may be preferably carried out by using an apparatus which comprises a sealable vessel, an upper shaft, a lower shaft, a plurality of heaters, a crucible and a means for dividing the surface of melt contained in the crucible, and as a result single crystal of III-V compound semiconductor having various excellent properties such as low impurity content (high purity), low dislocation density, and the like may be obtained.

REFERENCES:
patent: 3002824 (1961-10-01), Francois
patent: 3198606 (1965-08-01), Lyons
patent: 3741817 (1973-06-01), Bienert et al.
patent: 4352784 (1982-10-01), Lin
patent: 4478675 (1984-10-01), Akai
patent: 4528061 (1985-07-01), Miyazawa et al.
patent: 4664742 (1987-05-01), Tomizawa et al.
RADC-TR-86, Technical Report, Study Czochralski Liquid-Seal Crystal Growing Technique, Apr. 1979 (Kennedy et al.).
AuCoin et al; Liquid Encapsulated Compounding and Czochralski Growth of Semi-Insulating Gallium Arsenide; Solid State Tech. vol. 22 No. 1 Jan. 1979 pp. 59-62,67.

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