Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1996-12-26
1999-03-09
Bowers, Charles
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
438479, 438692, 438699, 438703, H01L 21302
Patent
active
058800034
ABSTRACT:
For giving a device surface to a semiconductor device comprising a semiconductor substrate portion which has a substrate surface and a protruding portion protruding from the substrate surface, a method includes the steps of coating the substrate surface and the protruding portion with a first anti-polishing film, depositing an insulator film on the first anti-polishing film, and coating the insulator film with a second anti-polishing film. The insulator film has a first polishing rate for a polishing operation. The second anti-polishing film has a second polishing rate which can be slower than the first polishing rate for the polishing operation. Thereafter, the polishing operation is applied to the second anti-polishing film and to the insulator to make the device surface become substantially planarized. It is preferable that the first anti-polishing film has the second polishing rate for the polishing operation.
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Bowers Charles
NEC Corporation
Whipple Matthew
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