Method of making a sub-ground plane for a micromachined device

Details Method of making a sub-ground plane for a micromachined device Method of making a sub-ground plane for a micromachined device

1997-03-18

1999-03-09

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438411, 438619, H05K 334

Patent

active

058799630

ABSTRACT:
A method and apparatus for providing a sub-ground plane for a micromachined device. The sub-ground plane is formed in or on the substrate. Above the sub-ground plane is a dielectric and then a discontinuous conductive layer used for interconnects for parts of the micromachined device. A movable microstructure is suspended above the interconnect layer. A conductive layer can be suspended above the movable microstructure. In one embodiment, the sub-ground plane is diffused into the substrate or a well in the substrate, and is of an opposite type from the type of silicon into which it is diffused. Alternatively, the sub-ground plane is formed from a conductive layer, deposited over the substrate before the layer used for interconnects.

REFERENCES:
patent: 3925880 (1975-12-01), Rosvold
patent: 4918032 (1990-04-01), Jain et al.
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5345824 (1994-09-01), Sherman
patent: 5479703 (1996-01-01), Desai
patent: 5537083 (1996-07-01), Lin

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