Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1996-11-07
1999-03-09
Wilczewski, Mary
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438158, 438609, H01L 2184
Patent
active
058799583
ABSTRACT:
A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions.
The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.
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Fukui Hirofumi
Hebiguchi Hiroyuki
Iwasaki Chisato
Kawahata Ken
Nakano Akira
Frontec Incorporated
Wilczewski Mary
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