Method of fabricating a high voltage transistor

Details Method of fabricating a high voltage transistor Method of fabricating a high voltage transistor

1995-10-17

1996-09-10

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 24, 437913, 148DIG126, H01L 218234

Patent

active

055545467

ABSTRACT:
A high voltage transistor includes a semiconductor-on-insulator (SOI) region in which a source and a channel are formed. A drain drift region is further formed partly in the SOI region and partly in the bulk silicon region beyond SOI and a gate is coupled to said SOI channel.

REFERENCES:
patent: 4523213 (1985-06-01), Konaka et al.
patent: 4866495 (1989-09-01), Kinzer
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5182226 (1993-01-01), Jang
patent: 5346835 (1994-09-01), Malhi et al.

Affiliated with

Also associated with

Rating

Method of fabricating a high voltage transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a high voltage transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a high voltage transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1320064