DRAM cell capacitor

Details DRAM cell capacitor DRAM cell capacitor

1994-01-12

1995-06-13

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257308, 257532, H01L 2968, H01L 2978, H01L 2992

Patent

active

054245664

ABSTRACT:
A semiconductor DRAM cell capacitor comprises an accumulation electrode (3) formed of a p-type semiconductor, and a capacitor insulating film (5) formed between the accumulation electrode (3) and the counter electrode (4). The potential of the counter electrode (4) is fixed at a ground potential. The semiconductor DRAM cell capacitor reduces the size of an associated chip and reduces the power consumption of the associated DRAM.

REFERENCES:
patent: 4868639 (1989-09-01), Mugiya et al.
patent: 4890199 (1989-12-01), Beutler
patent: 4989056 (1991-01-01), Hiraiwa et al.
patent: 5101251 (1992-03-01), Wakamiya et al.

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