Three-terminal tunnel device

Details Three-terminal tunnel device Three-terminal tunnel device

1987-08-27

1990-11-06

Hille, Rolf

357 234, 357 13, 357 12, H01L 2910, H01L 2990, H01L 2988

Patent

active

049690191

ABSTRACT:
A semiconductor device for generating tunnel electron carries without a depleted PN junction. A heavily doped P-type semiconductor region (12) is formed in a lightly doped P-type semiconductor substrate (10), and spaced apart from a heavily doped N-type semiconductor region (18), forming a conduction channel (20) therebetween. A thin electrical insulator (14) is formed overlying the P-type region (12) and the conduction channel (20). A gate conductor (16) is formed overlying the thin insulating layer (14). Connections to the semiconductor device are provided by a substrate terminal (22) connected to the substrate (10), a gate terminal (24) connected to the gate conductor (16), and a drain terminal (26) connected to N-type semiconductor region (18). A voltage applied to the gate terminal (24) is effective to cause band bending in the P-type region (12) in excess of the band gap, thereby causing tunneling of electrons from the valence band to the conduction band. Inversion of the P-type region (12) is prevented by a drain voltage applied to the N-type region (18) which attracts conduction electrons.

REFERENCES:
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patent: 3309586 (1967-03-01), Kleinknecht
patent: 3922710 (1975-11-01), Koike
patent: 4622573 (1986-11-01), Bakeman et al.
S. Hofstein et al., "The Insulated Gate Tunner JCN, Triode," IEEE Trans on Elec. Dev., vol. ED-12, #2, Feb. 1965, pp. 66-76.
W. Fischer, "Field Induced Tunnel Diode," IBM Tech. Discl. Bull., vol. 16 #7, Dec. 1973, 22303.
"Physics of Semiconductor Devices", S. M. Sze, Bell Laboratories, Inc. Murray Hill, N.J.; John Wiley & Sons.
"A New Three-Terminal Tunnel Device", IEEE Electron Device Letters, vol. EDL-8, No. 8, Aug. 1987 by Sanjay Banerjee et al.
"A Band-to-Band Tunneling Effect in The Trench Transistor Cell: Part I"; by Banerjee et al.; Symposium on VLSI Technology, 1987, Japan.

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