Method for vapor phase etching of silicon

Details Method for vapor phase etching of silicon Method for vapor phase etching of silicon

1994-03-11

1995-06-13

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

H01L 2100

Patent

active

054239443

ABSTRACT:
A method for etching a silicon wafer (20) by using hydrogen fluoride and water vapor combined with ozone is disclosed. The process does not require additional energy excitation or high pressure.

REFERENCES:
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 5078832 (1992-01-01), Tanaka
Deal, Vapor-Phase Wafer Cleaning, Oxide Etching, and Thin Film Growth, First Intl. Symp. on Cleaning Technology in Semiconductor Mfg, Electrochem. Soc., Oct. 1989, pp. 1-8.
Wong, Moslehi, and Reed, "Characterization of Wafer Cleaning and Oxide Etching Using Vapor-Phase Hydrogen Flouride", J. Electrochem. Soc., vol. 138, No. 6, Jun. 1991, The Electrochemical Society, Inc.
Deal, McNeilly, Kao, and deLarios, "Vapor-Phase Wafer Cleaning, Oxide Etching, and Thin Film Growth", Advantage Production Technology in Semiconductor Device Mfg. at Fall Meeting, The Electrochemical Society, Hollywood, Florida, Oct. 15-20, 1989.
Wong, Liu, Moslehi, and Reed, "Preoxidation Treatment Using HC1/HF Vapor", IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1991.

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