Method of manufacturing semiconductor devices having silicide el

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437201, H01L 2144

Patent

active

054828953

ABSTRACT:
A method of manufacturing a semiconductor substrate with a silicide electrode (interconnection) capable of forming a local interconnection by using a silicide formation technique. The method includes the steps of: selectively oxidizing the surface of a silicon semiconductor substrate to form a local oxide film and to define at least partially a silicon surface; depositing a cobalt film covering the silicon surface and local oxide film; depositing a silicon film on the cobalt film, and patterning the silicon film to form a silicon film pattern extending from the silicon surface to the local oxide film; forming a TiN film over the cobalt film; heating the substrate to progress a silicidation reaction between the cobalt film and silicon surface and between the cobalt film and silicon film pattern; and removing the remaining TiN film and an unreacted portion of the cobalt film.

REFERENCES:
patent: 4821085 (1989-04-01), Haken et al.
patent: 4873204 (1989-10-01), Wong et al.
patent: 5010032 (1991-04-01), Tong et al.
patent: 5190893 (1993-03-01), Jones, Jr. et al.
patent: 5313084 (1994-05-01), Wei
patent: 5387535 (1995-02-01), Wilmsmeyer
S. Wolf, "Silicon Processing for the VLSI Era", vol. 2, Lattice Press, 1990, pp. 162-167.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor devices having silicide el does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor devices having silicide el, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices having silicide el will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1302928

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.