Fishing – trapping – and vermin destroying
Patent
1994-08-23
1996-01-09
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437228, 437236, 437203, 1566441, 1566511, H01L 2144
Patent
active
054828945
ABSTRACT:
A semiconductor device and process for making the same are disclosed which incorporate organic dielectric materials to form self-aligned contacts (SACTs) reliably, even in deep, narrow gaps. In one embodiment, conductors 26 with insulating conductor caps 28 are formed over a silicon substrate 20 with a thin gate oxide 22. A conformal dielectric layer 30, preferably of thermally-grown oxide, is deposited over this structure, which is then covered with an organic-containing layer 32 and an inorganic cap layer 34 (e.g., CVD TEOS). An etch window 38 is patterned in photoresist layer 36 and used as a mask to etch cap window 39 through layer 34, using layer 32 as an etch stop. A second etch removes organic-containing layer 32 in contact window 41 (and preferably strips photoresist), using conformal layer 30 as an etch stop. A short anisotropic etch may be used to clear conformal layer 30 from gap bottom 43, after which conducting material 40 may be used to make electrical contact to the substrate.
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Ser. No. 08/234,100, Apr. 27, 1994, Havemann.
Ser. No. 08/234,099, Apr. 27, 1994, Havemann
Donaldson Richard L.
Harris James E.
Nguyen Tuan H.
Stoltz Richard A.
Texas Instruments Incorporated
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