Method of peeling thin films using directional heat flow

Details Method of peeling thin films using directional heat flow Method of peeling thin films using directional heat flow

1980-09-29

1981-12-01

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG88, C30B 106

Patent

active

043034632

ABSTRACT:
A method is disclosed for peeling thin layers of crystal from the substrates on which they have been grown. A thin layer of single-crystal material is grown on a single-crystal substrate having a lower melting point temperature than the layer. The layer and substrate are then brought to the melting point temperature of the substrate material, and the layer is contacted to a hot object so that heat flows through the layer to the substrate for liquifying the substrate material contiguous to the layer. The layer is peeled from the substrate where such liquification has occurred.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3993533 (1976-11-01), Milnes et al.
patent: 4027053 (1977-05-01), Lesk
patent: 4116751 (1978-09-01), Zaromb

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