Pattern forming material and method for forming pattern therewit

Details Pattern forming material and method for forming pattern therewit Pattern forming material and method for forming pattern therewit

1984-02-15

1985-03-26

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430270, 430312, 430313, 430322, 430325, 20415913, 528 26, 528 42, G03C 500

Patent

active

045073848

ABSTRACT:
A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.

REFERENCES:
patent: 3741932 (1973-06-01), Smith et al.
patent: 3843364 (1974-05-01), DeZuba et al.
"Double Layer Resist Systems for High Resolution Lithography", Hatzakis et al., IBM Thomas J. Watson Research Center, 9/81.

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