Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1982-06-25
1985-03-26
Lacey, David L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156614, 156DIG70, 156DIG81, 118719, 118729, 427 85, 427 87, C30B 2510, B05D 512, C23C 1304
Patent
active
045071691
ABSTRACT:
An apparatus for the vapor phase growth of a semiconductor multilayer film on a semiconductor substrate is provided with an additional reaction tube arranged in a main reaction tube. The additional reaction tube accommodates a source material and forms an independent vapor phase growth zone therein. The method includes forming one semiconductor layer of the multilayer film within the additional reaction tube and forming another semiconductor layer of the multilayer film outside the additional reaction tube.
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patent: 4030949 (1977-06-01), Horikoshi et al.
patent: 4116733 (1978-09-01), Olsen et al.
patent: 4137108 (1979-01-01), Ihara et al.
Japanese Journal of Applied Physics, vol. 19, No. 2, Feb. 1980, T. Mizutani et al.: "Vapor phase growth of InGaAsP/InP DH structures by the dual-growth-chamber method".
Fujitsu Limited
Lacey David L.
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