Method to fabricate a polysilicon stud using an oxygen ion impla

Details Method to fabricate a polysilicon stud using an oxygen ion impla Method to fabricate a polysilicon stud using an oxygen ion impla

1997-05-15

1998-04-07

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438635, 438647, 438659, 438766, 438770, H01L 21283, H01L 213213

Patent

active

057364591

ABSTRACT:
A process for creating a MOSFET device, using a polysilicon contact stud, in a sub-micron diameter contact hole, used to interconnect an underlying active device region, in a semiconductor substrate, and an overlying metal structure, has been developed. The process features depositing a polysilicon layer, to fill a sub-micron diameter contact hole, followed by an oxygen ion implantation procedure, into regions of polysilicon that are not used for the contact stud. A subsequent anneal procedure converts the oxygen implanted regions of the polysilicon layer to a silicon oxide layer. Removal of the silicon oxide layer leaves a polysilicon contact stud, in the sub-micron diameter contact hole.

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patent: 5599736 (1997-02-01), Tseng

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