MOS capacitor for improving electrostatic durability by using of

Details MOS capacitor for improving electrostatic durability by using of MOS capacitor for improving electrostatic durability by using of

1996-11-27

1998-09-08

Kincaid, Kristine L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613061, 361322, 361329, 257532, 257516, H01G 4005

Patent

active

058054103

ABSTRACT:
The present invention relates to a MOS capacitor. According to this invention, the MOS capacitor has a transistor structure. One electrode of the capacitor is connected to an emitter of the transistor and the other electrode of the capacitor is connected to a collector of the transistor. When the MOS capacitor is biased by static electricity the electrostatic durability is improved, since an electrostatic discharge path is formed by breakdown of a collector and an emitter.

REFERENCES:
patent: 4377029 (1983-03-01), Ozawa
patent: 4491746 (1985-01-01), Koike
patent: 4688323 (1987-08-01), Yoshida et al.
patent: 5089875 (1992-02-01), Koyama

Affiliated with

Also associated with

Rating

MOS capacitor for improving electrostatic durability by using of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS capacitor for improving electrostatic durability by using of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS capacitor for improving electrostatic durability by using of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1288842