Method of manufacturing semiconductor device having a pressure s

Details Method of manufacturing semiconductor device having a pressure s Method of manufacturing semiconductor device having a pressure s

1985-11-27

1986-10-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29610SG, 29580, 148 15, 148175, 148187, 156647, 156657, 1566591, 156662, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046183973

ABSTRACT:
The present invention relates to a semiconductor device having a semiconductor pressure sensor, which includes a heavily-doped semiconductor layer having a predetermined impurity concentration gradient and formed at the bottom of a diaphragm (membrane portion). Owing to the presence of this semiconductor layer, a flat diaphragm is formed, and a semiconductor pressure sensor of high precision is provided.

REFERENCES:
patent: 3858150 (1974-12-01), Gurtler et al.
patent: 4033787 (1977-07-01), Marshall
patent: 4372803 (1983-02-01), Gigante

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