Semiconductor device with element window defined by closed loop

Details Semiconductor device with element window defined by closed loop Semiconductor device with element window defined by closed loop

1996-08-20

1998-09-08

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, 257380, 257408, H01L 2976, H01L 2994

Patent

active

058048570

ABSTRACT:
A semiconductor device, which acts as a resistor element, is constructed using a semiconductor substrate, a well region, a field insulation film having an element hole, a lamination layer and an impurity-doped region. The lamination layer is made by laminating a conductor layer on an insulation film, wherein the lamination layer has a closed-loop shape to cover overall periphery of an edge portion of the element hole. The impurity-doped region is formed on the well region in a self-aligned relationship with the lamination layer, wherein a P-N junction is formed between the impurity-doped region and well region with respect to the element hole and is terminated inside of the edge portion of the element hole. Another semiconductor device, which acts as a MOS transistor, is constructed using a conductor layer having a closed-loop shape, a source region and a drain region in addition to the semiconductor substrate, well region and field insulation film. Both of the source region and drain region are formed on the well region by effecting an impurity doping process and are formed in a self-aligned relationship with the closed-loop shape of the conductor layer and element hole. Further, a P-N Junction, which lies between the drain region and well region, is terminated inside of the edge portion of the element hole. Thus, it is possible to reduce dispersion in measurements of the P-N junctions and to improve reversal characteristics in the semiconductor devices.

REFERENCES:
patent: 4924277 (1990-05-01), Yamane et al.
patent: 5144393 (1992-09-01), Yamaguchi et al.
patent: 5512769 (1996-04-01), Yamamoto
patent: 5585656 (1996-12-01), Hsue et al.
patent: 5585660 (1996-12-01), Mei

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