Thin film transistors

Details Thin film transistors Thin film transistors

1996-07-15

1998-09-08

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257344, 257365, H01L 2976, H01L 2994

Patent

active

058048553

ABSTRACT:
A thin film transistor includes a thin film transistor layer having a source region, a channel region and a drain region. In one implementation, a gate of the transistor is disposed laterally proximate the thin film channel region and comprises an annulus which laterally encircles the laterally proximate thin film channel region. In another implementation, a channel region of a thin film transistor extends elevationally away from a substrate. Source and drain regions are operatively associated with the channel region and are elevationally spaced therealong and apart from one another. A gate is disposed over the substrate and laterally proximate the channel region.

REFERENCES:
patent: 4845537 (1989-07-01), Nishimura et al.
patent: 4864374 (1989-09-01), Banerjee
patent: 5229310 (1993-07-01), Sivan
patent: 5270968 (1993-12-01), Kim et al.
patent: 5274259 (1993-12-01), Grabowski et al.
patent: 5283455 (1994-02-01), Inoue et al.
patent: 5334862 (1994-08-01), Manning
patent: 5432370 (1995-07-01), Kitamura et al.
patent: 5444275 (1995-08-01), Kugishima et al.
patent: 5463240 (1995-10-01), Watanabe
J.D. Hayden et al., "A New Toroidal TFT Structure for Future Generation SRAMs", IEEE, 1993, pp. 825-828.

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