Method for forming a wiring metal layer in a semiconductor devic

Details Method for forming a wiring metal layer in a semiconductor devic Method for forming a wiring metal layer in a semiconductor devic

1997-08-12

1998-09-08

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438648, 438680, 438688, H01L 2128

Patent

active

058045015

ABSTRACT:
A method for forming a wiring layer for a semiconductor device is disclosed. During the formation of a VLSI-scale device having a contact hole with a large aspect ratio, metal layers are filled into the contact hole without spatial discontinuities, and a first wiring metal deposition process is carried out by applying a chemical vapor deposition (CVD) process. Compared with a conventional method, even if a thin film of aluminum is deposited, the wiring metal film can be deposited into the contact hole without spatial discontinuities. The upper opening of the contact hole may remain wide after deposition of the first wiring layer, and the wiring metal atoms may easily move into the contact hole upon reaching the wafer during a second wiring metal deposition. The disclosed invention may provide for superior wiring metal filling characteristics as compared with conventional methods. Further, the first wiring metal deposition may be carried out within a short period of time as compared with the conventional method, and the productivity may be improved.

REFERENCES:
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5008217 (1991-04-01), Case et al.
patent: 5171412 (1992-12-01), Talieh et al.
patent: 5266521 (1993-11-01), Lee et al.
patent: 5371042 (1994-12-01), Ong
patent: 5380678 (1995-01-01), Yu et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5545591 (1996-08-01), Sugai et al.

Affiliated with

Also associated with

Rating

Method for forming a wiring metal layer in a semiconductor devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a wiring metal layer in a semiconductor devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a wiring metal layer in a semiconductor devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1281775