Method for preventing substrate damage during semiconductor fabr

Details Method for preventing substrate damage during semiconductor fabr Method for preventing substrate damage during semiconductor fabr

1995-10-11

1998-09-08

Breneman, R. Bruce

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

440449, 440705, H01L 27105

Patent

active

058044930

ABSTRACT:
A method for preventing substrate damage during semiconductor fabrication, comprising, forming a pad oxide layer on the substrate, depositing a polysilicon buffer layer on the pad oxide layer, ion-implanting fluorine into the polysilicon buffer layer, depositing a silicon nitride layer on the polysilicon buffer layer, defining an active region in the substrate, forming a local oxide layer beside the surface of the active region, removing the silicon nitride layer, removing the polysilicon buffer layer by dry etching, and etching the pad oxide layer to expose the substrate surface of active region.

REFERENCES:
patent: 4931405 (1990-06-01), Kamijo et al.
patent: 5244819 (1993-09-01), Yue
patent: 5279976 (1994-01-01), Hayden et al.
patent: 5480828 (1996-01-01), Hsu et al.
"Silicon Processing For the ULSI Era"; vol. 2; Process Integration; Wolf; Lattice Press; Sunset Beach, Ca.; .COPYRGT. 1990; pp. 32-35, 199.
"VLSI Fabrication Principles--Silicon and Gallium Arsenide"; Sorat K. Ghandhi; John Wiley & Sons; NY, NY; .COPYRGT. 1983; pp. 377-383.

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