Method of manufacturing a crown shape capacitor in semiconductor

Details Method of manufacturing a crown shape capacitor in semiconductor Method of manufacturing a crown shape capacitor in semiconductor

1996-07-12

1998-09-08

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438398, H01L 218242

Patent

active

058044892

ABSTRACT:
The present invention is a method of manufacturing crown shape capacitors in the semiconducter memories. Using a single step etching to farbricate the capacitor in a DRAM cell. The method can form side wall polymers and etching byproductions on the surface of the first polysilicon, using the side wall polymers and the etching byproductions as a mask to form the crown shape capacitors with pillars. Moreover, this present invention can form the crown shape structure and pillars in the same step, the crown shape structure and the pillars increase the surface area of the capacitor. Therefore the present invention will increase the performance of the capacitor.

REFERENCES:
patent: 4225945 (1980-09-01), Kuo
patent: 4457063 (1984-07-01), Park
patent: 5342800 (1994-08-01), Jun
patent: 5374580 (1994-12-01), Baglee et al.
patent: 5543345 (1996-08-01), Liaw et al.
patent: 5668038 (1997-09-01), Huang et al.

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