Ion implantation apparatus for semiconductor manufacture

Details Ion implantation apparatus for semiconductor manufacture Ion implantation apparatus for semiconductor manufacture

1984-03-13

1989-06-13

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250296, H01J 37317

Patent

active

048395234

ABSTRACT:
An ion implantation apparatus which is suited for manufacturing semiconductor devices and which is particularly suited for implanting double charged ions into the wafers 22. Ions of a predetermined mass only are selected by a mass-separating electromagnet 14 from an ion beam 12 that is emitted from an ion source 10, and are implanted into the wafer 22 via a slit 16. Between the slit 16 and the mass-separating electromagnet, there are provided field electrodes 24 having a direction of deflection which is the same as that of the mass-separating electromagnet 14 to separate ions having different energy levels, and deflection magnets 26 having a direction of deflection at right angles with the direction of deflection of the mass-separating electromagnet. The slit 16 is arranged so that undeflected neutral particles and low energy ions deflected by the field electrodes 24 will pass through the slit while high energy ions will be deflected the proper amount to pass through the slit. Correction means 32 can be located between the slit and the wafer to ensure that the beam passing through the slit strikes the wafer at the proper angle.

REFERENCES:
patent: 2485470 (1949-10-01), Baker
patent: 3194961 (1965-07-01), Ewald et al.
patent: 3434894 (1969-03-01), Gale
patent: 3569757 (1971-03-01), Brewer et al.

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