Method for forming a semiconductor device in which the insulatin

Details Method for forming a semiconductor device in which the insulatin Method for forming a semiconductor device in which the insulatin

1996-06-20

1998-04-07

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438479, 438487, 438795, 438967, H01L 21336, H01L 21324

Patent

active

057364397

ABSTRACT:
A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.

REFERENCES:
patent: 4763183 (1988-08-01), Ng et al.
patent: 4786952 (1988-11-01), MacIver et al.
patent: 4857086 (1989-08-01), Malhi et al.
patent: 4933298 (1990-06-01), Hasegawa
patent: 5049968 (1991-09-01), Nakagawa et al.
patent: 5250444 (1993-10-01), Kahn et al.
patent: 5254208 (1993-10-01), Zhang
patent: 5278093 (1994-01-01), Yonehara

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