Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1985-05-03
1987-10-27
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156648, 156657, 1566591, 156662, 20419232, 357 736, 357 55, 437225, 437919, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
047027959
ABSTRACT:
A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant under RIE conditions with a SiO2 hard mask. The SiO2 hard mask is forward sputtered during the course of the Si etch so as to slowly deposit SiOx (x<2) on the sidewalls of the silicon trench. Since the sidewall deposit shadows etching at the bottom of the trench near the sidewall, the effect of this gradual buildup is to produce a positively sloped trench sidewall without "grooving" the bottom of the trench, and without linewidth loss. This process avoids the prior art problems of mask undercut, which generates voids during subsequent refill processing, and grooving at the bottom of the trench, which is exceedingly deleterious to thin capacitor dielectric integrity.
REFERENCES:
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4326332 (1982-04-01), Kenney
patent: 4533430 (1985-08-01), Bower
Heiting Leo N.
Powell William A.
Sharp Mel
Sorensen Douglas A.
Texas Instruments Incorporated
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