Ion-optical imaging system

Details Ion-optical imaging system Ion-optical imaging system

1992-07-10

1994-09-27

Dzierzynski, Paul M.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250396R, 250398, H01J 37317

Patent

active

053509242

ABSTRACT:
A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is one of the following combinations: (a) two accelerating Einzel lenses; (b) an accelerating immersion lens and a decelerating immersion lens wherein the accelerating immersion lens is the first collecting lens following the mask; (c) an accelerating immersion lens and a decelerating asymmetric Einzel lens wherein the accelerating immersion lens is the first collecting lens following the mask; (d) an accelerating asymmetric Einzel lens and a decelerating immersion lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask; and (e) an accelerating asymmetric Einzel lens and a decelerating asymmetric Einzel lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask.

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Microelectronic Engineering; May 1989, Nos. 1-4, Amsterdam, NL W. L. Brown; "Recent Progress in Ion Beam Lithography"; pp. 269-276.

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