Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-03-22
1994-09-27
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419226, 427108, 427167, 427344, C23C 1434
Patent
active
053504984
ABSTRACT:
A substrate (20) is treated prior to use to induce a near-perpendicular orientation of a liquid crystal director (26) relative to the substrate. A layer of silica (38) is deposited upon the substrate (20) by in-line magnetron sputtering as the substrate (20) is moved past the sputtering target (78), and the silica-coated substrate (20) is thereafter treated with a long-chain alcohol. The alcohol-treated substrate (20) is covered with a layer of liquid crystal (22), the director (26) of the liquid crystal (22) assuming a field-off state tilted about 1-3 degrees from the perpendicular toward an azimuthal direction (30) parallel to the direction of movement of the substrate (20) during deposition.
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Garvin Hugh L.
Miller Leroy J.
Robinson Klaus
Smith, Jr. Willis H.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
Nguyen Nam
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