Liquid phase epitaxial growth of bismuth-containing garnet films

Details Liquid phase epitaxial growth of bismuth-containing garnet films Liquid phase epitaxial growth of bismuth-containing garnet films

1985-09-11

1987-09-01

Richman, Barry S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG63, 156DIG79, 252 6257, 252364, 427128, C30B 1904

Patent

active

046907262

ABSTRACT:
Epitaxial layers of bismuth-containing magnetic garnet materials are grown from a melt which comprises flux components lead oxide, bismuth oxide, and one or several additional oxides selected from vanadium oxide, tungsten oxide, molybdenum oxide, and chromium trioxide. The presence of such additional flux component results in increased magnetic anisotropy per degree of supercooling and thus enhances device properties and facilitates epitaxial layer deposition.

REFERENCES:
patent: 3790405 (1974-02-01), Levinstein
patent: 4077832 (1978-05-01), Robertson et al.
patent: 4092208 (1978-05-01), Brice et al.
patent: 4295988 (1981-10-01), Nelson et al.
patent: 4400445 (1983-08-01), Berkstresser et al.
patent: 4419417 (1983-12-01), Le Craw et al.
Breed et al.; Garnet Films for Micron and Submicron Magnetic Bubbles with Low Damping Constants, Appl. Phys., vol. 24, No. 2, Feb. 1981, pp. 163-167.
Wanklyn et al., Flux Growth of Rare Earth Silicates and Aluminosilicates; J. of Material Science, vol. 9, No. 12, Dec. 1974, pp. 2007-2014.

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