Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

1985-11-22

1987-09-01

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

427 39, 427 74, 437 81, H01L 21205

Patent

active

046907173

ABSTRACT:
A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN, or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon, or phosphorus only in such a low concentration as 5.times.10.sup.18 atoms/cm.sup.3 or less, 4.times.10.sup.18 atoms/cm.sup.3 or less, or 5.times.10.sup.15 atoms/cm.sup.3 or less, respectively.

REFERENCES:
patent: 4459163 (1984-07-01), MacDiarmid et al.
A. E. Delahoy et al., Conf. Record, 15th IEEE Photovoltare Specialists Conf. (1981), pp. 704-712.

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