Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-13
2000-11-21
Trinh, Michael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, H01L 2976
Patent
active
061506982
ABSTRACT:
A MOS field effect transistor device and fabrication method thereof are provided, which include a non-uniformly doped well region composed of (1) a first portion thereof which is contiguous to a source or drain region, and situated under a gate electrode, and has a first concentration of said first conductive type impurities, and (2) a second.sub.-- portion which has a second concentration higher than the first concentration of said first conductive type impurities. This structure of the field effect transistor has advantages such as, for example, suppressing short channel effects, increasing source or drain junction breakdown voltages and improving high frequency characteristics of the transistor.
REFERENCES:
patent: 5292671 (1994-03-01), Odanaka
patent: 5466957 (1995-11-01), Yuki et al.
patent: 5489540 (1996-02-01), Liu et al.
patent: 5814866 (1998-09-01), Borland
A Novel Source-to-Drain Nonuniformly Doped Channel (NUDC) MOSFET For High Current Drivability and Threshold Voltage Controllability, Okumura et al., IEDM Technical Digest 1990, pp. 15.5.1--15.5.4.
Kawashima Ikue
Nanjyo Takeshi
Ohtsuka Masaya
Ricoh & Company, Ltd.
Trinh Michael
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