Thin film transistor fabrication method, active matrix substrate

Details Thin film transistor fabrication method, active matrix substrate Thin film transistor fabrication method, active matrix substrate

1999-08-23

2000-11-21

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438765, 438770, H01L 2131

Patent

active

061502839

ABSTRACT:
To provide a TFT fabrication method capable of forming on a large-surface area substrate with uniform film thickness and at high deposition rate of film, while being a low-temperature process, a high-quality gate insulation film having good charge behavior by forming a silicon oxide film by a thin film transistor fabrication method having a channel region connected to a source region and a drain region, and a gate electrode confronting with the channel region through a gate insulation film, wherein in the formation process of said gate insulation film using plasma chemical vapor deposition under the condition that tetraethoxysilane is used as the feed gas to provide the silicon and the distance between electrodes for generating the plasma is about 15 mm or less.

REFERENCES:
patent: 4872947 (1989-10-01), Wang et al.
patent: 5120680 (1992-06-01), Foo et al.
patent: 5426076 (1995-06-01), Moghadam
patent: 5858819 (1999-01-01), Miyasaka
patent: 5976989 (1999-11-01), Ishiguro
Sharp Technical Journal (No. 6, Apr. 1995) Low Temperature Deposition of High Quality Silicon Dioxide Films.

Affiliated with

Also associated with

Rating

Thin film transistor fabrication method, active matrix substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor fabrication method, active matrix substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor fabrication method, active matrix substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1256886