Method of fabricating semiconductor device for preventing antenn

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438637, 438627, 438643, 438648, 438685, 438672, H01L 214763

Patent

active

061502618

ABSTRACT:
A method of fabricating a semiconductor device for preventing an antenna effect. In the invention, there is no additional mask layer or specific process performed. Thus, the fabrication cost does not increase. In addition, extra electrons are released through a path formed in the invention during the plasma-etching step. An antenna effect thus does not occur. The reliability of the semiconductor device is increased.

REFERENCES:
patent: 5312775 (1994-05-01), Fujii et al.
patent: 5593919 (1997-01-01), Lee et al.
patent: 5763954 (1998-06-01), Hyakutake
patent: 5821168 (1998-10-01), Jain
patent: 5913141 (1999-06-01), Bothra
patent: 5960310 (1999-09-01), Jeong

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating semiconductor device for preventing antenn does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device for preventing antenn, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device for preventing antenn will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1256631

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.