Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-05-25
2000-11-21
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438627, 438643, 438648, 438685, 438672, H01L 214763
Patent
active
061502618
ABSTRACT:
A method of fabricating a semiconductor device for preventing an antenna effect. In the invention, there is no additional mask layer or specific process performed. Thus, the fabrication cost does not increase. In addition, extra electrons are released through a path formed in the invention during the plasma-etching step. An antenna effect thus does not occur. The reliability of the semiconductor device is increased.
REFERENCES:
patent: 5312775 (1994-05-01), Fujii et al.
patent: 5593919 (1997-01-01), Lee et al.
patent: 5763954 (1998-06-01), Hyakutake
patent: 5821168 (1998-10-01), Jain
patent: 5913141 (1999-06-01), Bothra
patent: 5960310 (1999-09-01), Jeong
Chang Yih-Jau
Hsu Chen-Chung
Bowers Charles
Nguyen Thanh
United Microelectronics Corp.
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