Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1998-06-05

2000-11-21

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438231, 438232, 438527, H01L 2184, H01L 21336, H01L 218238

Patent

active

061502022

ABSTRACT:
Disclosed is a method for fabricating semiconductor device, which has the steps of: forming a device separation region to section a first device forming region and a second device forming region on a substrate with a SOI structure; forming gate oxide film on the first and second device forming regions; introducing first conductivity type impurity and second conductivity type impurity into the first and second device forming regions to form a channel region of a first channel type transistor by the first conductivity type impurity and to form a source-drain region of the first channel type transistor by the second conductivity type impurity on at least the first device forming region; and introducing the first conductivity type impurity and the second conductivity type impurity selectively into the second device forming region to form a channel region and a source-drain region of a second channel type transistor on the second device forming region.

REFERENCES:
patent: 4613885 (1986-09-01), Haken
patent: 4956311 (1990-09-01), Liou et al.
patent: 5543338 (1996-08-01), Shimoji
patent: 5610087 (1997-03-01), Hsu et al.
patent: 5654213 (1997-08-01), Choi et al.
Kanaba et al., "A 7 CMOS Technology Utilizing Liquid Phase Selective Oxide Depostition" IEEE pp. 25.1.1-25.1.4 (1991).

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