Magnetoresistance effect device, and magnetoresistance effect ty

Static information storage and retrieval – Systems using particular element – Magnetoresistive

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365171, 365173, G11C 1100, G11C 1114

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06111782&

ABSTRACT:
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.

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