Stacked V-cell capacitor using a disposable outer digit line spa

Details Stacked V-cell capacitor using a disposable outer digit line spa Stacked V-cell capacitor using a disposable outer digit line spa

1993-04-15

1994-06-14

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365 51, G11C 1124

Patent

active

053216482

ABSTRACT:
A stacked v-cell (SVC) capacitor using a modified stacked capacitor storage cell fabrication process. The SVC capacitor is made up of polysilicon structure, having a v-shaped cross-section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The addition of the polysilicon structure increases storage capability 70% without enlarging the surface area defined for a normal stacked capacitor cell.

REFERENCES:
patent: 5214603 (1993-05-01), Dhona et al.

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