Semiconductor memory device with tandem sense amplifier units

Details Semiconductor memory device with tandem sense amplifier units Semiconductor memory device with tandem sense amplifier units

1989-11-27

1991-07-02

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365190, 365203, G11C 1140

Patent

active

050291378

ABSTRACT:
A semiconductor memory device is used for storing data bits in memory cells thereof, and the data bits are read out from the memory cells in the form of small differences in voltage level on bit line pairs coupled to the memory cells, wherein gate transistors are inserted between each of the bit line pairs and a pair of sense nodes, and in which the bit line pair and the sense node pair are respectively associated with first and second sense amplifier circuits for rapidly increasing the small difference in voltage level, because the electric charges accumulated in the bit line pair are shared by the first and second sense amplifier circuits.

REFERENCES:
patent: 4112512 (1978-09-01), Arzubi et al.
patent: 4542483 (1985-09-01), Procyk

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