MOSFET with plural channels for punch through and threshold volt

Details MOSFET with plural channels for punch through and threshold volt MOSFET with plural channels for punch through and threshold volt

1997-08-13

2000-08-29

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, H01L 2994

Patent

active

061112968

ABSTRACT:
Impurity regions shaped in linear patterns are formed in parallel with the channel direction (electric field direction) in a channel forming region. The impurity regions restrain the expansion of the drain side depletion layer, and the narrow channel effect is exhibited to prevent the short channel effect. Also, in the channel forming region, the impurity regions control the carrier moving directing in one way, to thereby restrain the scattering caused by irregular collision between the carriers.

REFERENCES:
patent: 4697198 (1987-09-01), Komori et al.
patent: 5210437 (1993-05-01), Sawada et al.
patent: 5350940 (1994-09-01), Rona
patent: 5675164 (1997-10-01), Brunner et al.

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